Inthisletter,ap-channellateraldoublediffusedMOSFET(p-LDMOS)withdoubleelectronpathsusedtoenhancethecurrentcapabilityisproposed.Theproposedp-LDMOShastwon-channelsthatarecontrolledbyanauto-generatedvoltagesignal(VGn).ThevoltagesignalVGnisgeneratedduringtheONandOFFstatesoftheholecurrentthatflowsacrossanintegratedresistor(Rp)implementedintheP-baseregion.Thus,thecurrentcapabilityofthep-LDMOScanbesignificantlyenhancedbytheintr
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