Anoveldiode-clampedcarrierstoredtrenchbipolartransistor(CSTBT)withimprovedperformancesisproposed.TheimprovementhasbeenachievedbyintroducingaP-layerregionunderthetrenchgate,whichisconnectedtothecathodeelectrodethroughtwointegratedseriesdiodes.Intheblocking-state,almostallofthereversevoltageissustainedbyPlayer/N-driftjunction,whichmakesthedopingconcentrationofthecarrierstoredlayerisindependentofthebreakdownvoltage,thusovercoming
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