上传者: weixin_38717169
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上传时间:2022/9/4 7:32:07
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Anoveldiode-clampedCSTBTwithultra-lowon-statevoltageandsaturationcurrent
Anoveldiode-clampedcarrierstoredtrenchbipolartransistor(CSTBT)withimprovedperformancesisproposed.TheimprovementhasbeenachievedbyintroducingaP-layerregionunderthetrenchgate,whichisconnectedtothecathodeelectrodethroughtwointegratedseriesdiodes.Intheblocking-state,almostallofthereversevoltageissustainedbyPlayer/N-driftjunction,whichmakesthedopingconcentrationofthecarrierstoredlayerisindependentofthebreakdownvoltage,thusovercoming
本软件ID:15121348